PART |
Description |
Maker |
HY64LD16322M-DF85I HY64LD16322M-DF85E |
PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC x16|2.5(VDD)2.5(VDDQ)V|85|Pseudo SRAM - 32M x16 | 2.5(VDD)在2.5(提供VDDQ)V | 85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
EM47DM1688SBA-125E EM47DM1688SBA-150 EM47DM1688SBA |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
RT9005BGSP |
DDR VDDQ and Termination Voltage Regulator 用于Vddq和终止电压调节器
|
Richtek Technology, Corp.
|
ISL653031EVAL1 ISL6530 ISL6530CB ISL6530CB-T ISL65 |
Dual 5V Synchronous Buck Pulse-Width Modulator (PWM) Controller for DDRAM Memory VDDQ and VTT Termination Dual Low-Noise High-Drive Operational Amplifier 8-SOIC 0 to 70 Dual 5V Synchronous Buck Pulse-Width Modulator (PWM) Controller for DDRAM Memory VDDQ and VTT Termination DUAL SWITCHING CONTROLLER, 325 kHz SWITCHING FREQ-MAX, PDSO24 Dual 5V Synchronous Buck Pulse-Width Modulator (PWM) Controller for DDRAM Memory VDDQ and VTT Termination DUAL SWITCHING CONTROLLER, 325 kHz SWITCHING FREQ-MAX, PQCC32
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
M1346 |
VDD CONTROL RGB LED IC
|
MOSDESIGN SEMICONDUCTOR CORP ETC[ETC]
|
M3764 |
VDD CONTROL ALARM SOUND
|
List of Unclassifed Manufacturers ETC SHENZHEN TIRO SEMICONDUCTOR
|
MT58L64L32F |
2Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through
|
MICRON
|
2SK3668 |
Low gate charge QG= 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A)
|
TY Semiconductor Co., Ltd
|
2SK3325 |
Low gate charge: QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
|
TY Semiconductor Co., Ltd
|
MT49H8M36 |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
Micron Technology
|
MT8814 |
8 x 12 Analog Switch Array with Low On-resistance, for (VDD - VEE) =4.5 V to 13.2 V, with Chip Select
|
Zarlink Semiconductor
|